Stress-free path to stress-free metallic films paves the way
for next-gen circuitry

Researchers from Tokyo Metropolitan University have
used high power impulse magnetron scattering (HiPIMS) to create
thin films of tungsten with unprecedentedly low levels of film
stress. By optimizing the timing of a substrate bias pulse with
microsecond precision, they minimized impurities and defects to
form crystalline films with stresses as low as 0.03 GPa, similar to
those achieved through annealing. Their work promises efficient
pathways for creating metallic films for the electronics
industry.