Spin-galvanic effect in graphene with topological topping
demonstrated

Researchers at Chalmers University of Technology,
Sweden, have demonstrated the spin-galvanic effect, which allows
for the conversion of non-equilibrium spin density into a charge
current. Here, by combining graphene with a topological insulator,
the authors realize a gate-tunable spin-galvanic effect at room
temperature. The findings were published in the scientific journal
Nature Communications.