Scientists shrink fin-width of FinFET to nearly the physical
limit

FinFETs are known to be an evolution of
metal-oxide-semiconductor field effect transistors (MOSFETs)
featuring a semiconducting channel vertically wrapped by conformal
gate electrodes. It was first proposed in 1990s in order to avoid
the short channel effect and other drawbacks resulted from the
shrinking of transistor size. Because of the limitation of
nanofabrication, the minimum fin width is about 5 nm in current
technology.