Scientists from Far Eastern Federal University (FEFU)
and the Far Eastern Branch of the Russian Academy of Sciences (FEB
RAS) developed the nanoheterostructure consisted of a nanocrystal
magnetite film (Fe3O4) covering a silicon substrate with an
additional layer of silicon oxide (SiO2/Si). Its magnetic and
magnetotransport properties may help to design highly efficient
hybrid semiconductor devices with new spintronic elements. The
related article was published in the Journal of Alloys and
Compounds.
