NewsScientists close to integrating silicon electronics and
spintronics

23rd October 2019by admin0
https://nfusion-tech.com/wp-content/uploads/2019/10/scientists-close-to-integrating-silicon-electronics-andspintronics_5db0b99a990a6.jpeg

Scientists from Far Eastern Federal University (FEFU)
and the Far Eastern Branch of the Russian Academy of Sciences (FEB
RAS) developed the nanoheterostructure consisted of a nanocrystal
magnetite film (Fe3O4) covering a silicon substrate with an
additional layer of silicon oxide (SiO2/Si). Its magnetic and
magnetotransport properties may help to design highly efficient
hybrid semiconductor devices with new spintronic elements. The
related article was published in the Journal of Alloys and
Compounds.

Leave a Reply

Your email address will not be published. Required fields are marked *

https://nfusion-tech.com/wp-content/uploads/2019/10/Logo_newfusion-footer.png
https://nfusion-tech.com/wp-content/uploads/2019/10/Logo_newfusion-footer.png
Subscribe

If you wish to receive our latest news in your email box, just subscribe to our newsletter. We won’t spam you, we promise!

    New Fusion

    The New Fusion technology is based on a phenomenon called triplet-triplet annihilation (TTA) which is a process in which two triplet excitons annihilate and produce a higher energy singlet exciton.

    Subscribe

    If you wish to receive our latest news in your email box, just subscribe to our newsletter. We won’t spam you, we promise!

      New Fusion

      The New Fusion technology is based on a phenomenon called triplet-triplet annihilation (TTA) which is a process in which two triplet excitons annihilate and produce a higher energy singlet exciton.

      Copyright @2020 New Fusion All Rights Reserved

      Designed by FallingBrick


      Warning: Creating default object from empty value in /homepages/9/d775151175/htdocs/nfusion-tech.com/wp-content/plugins/applauz/framework_bt_plugin/.framework_bt_plugin.php on line 1640