A research team of Ehime University paved a way to
achieve unexplored III-V semiconductor nanostructures. They grew
branched GaAs nanowires with a nontoxic Bi element employing
characteristic structural modifications correlated with metallic
droplets, as well as crystalline defects and orientations. The
finding provides a rational design concept for the creation of
semiconductor nanostructures with the concentration of constituents
beyond the fundamental limit, making it potentially applicable to
novel efficient near-infrared devices and quantum
electronics.
