University of South Florida researchers recently
developed a novel approach to mitigating electromigration in
nanoscale electronic interconnects that are ubiquitous in
state-of-the-art integrated circuits. This was achieved by coating
copper metal interconnects with hexagonal boron nitride (hBN), an
atomically-thin insulating two-dimensional (2-D) material that
shares a similar structure as the “wonder material”
graphene.
New method developed to improve durability of
nano-electronic components, further semiconductor
manufacturing
