Nanoscale imaging of dopant nanostructures in silicon-based
devices

When fabricating integrated circuits and different
types of silicon-based devices, researchers need to position dopant
nanostructures in specific ways with high levels of precision.
However, arranging these structures at the nanometer scale can be
challenging, as their small size makes them difficult to observe
and closely examine. Incorrectly tampering with them can have
detrimental effects, which can potentially compromise a device’s
overall functioning and security.