NewsNanoscale imaging of dopant nanostructures in silicon-based
devices

24th August 2020by admin0
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When fabricating integrated circuits and different
types of silicon-based devices, researchers need to position dopant
nanostructures in specific ways with high levels of precision.
However, arranging these structures at the nanometer scale can be
challenging, as their small size makes them difficult to observe
and closely examine. Incorrectly tampering with them can have
detrimental effects, which can potentially compromise a device’s
overall functioning and security.

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    The New Fusion technology is based on a phenomenon called triplet-triplet annihilation (TTA) which is a process in which two triplet excitons annihilate and produce a higher energy singlet exciton.

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      New Fusion

      The New Fusion technology is based on a phenomenon called triplet-triplet annihilation (TTA) which is a process in which two triplet excitons annihilate and produce a higher energy singlet exciton.

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