In order to make transistors that operate using the
spin of electrons rather than their charge, it is necessary to find
a way of switching spin currents on and off. Furthermore, the
lifetime of the spins should at least be equal to the time taken
for these electrons to travel through a circuit. University of
Groningen scientists have now taken an important step forward by
creating a device that meets both of these requirements, based on a
double layer of graphene on top of a layer of tungsten disulfide.
Their results have been published on 16 October in the journal
Physical Review B.
