Organic-inorganic halide perovskite quantum dots
(PQDs) form an attractive class of materials for optoelectronic
applications. Their charge transport properties are, however,
inferior compared to materials such as graphene. Conversely,
graphene contains a charge generation efficiency that is too low
for applications in optoelectronics. In a new report, Basudev
Pradhan and a research team at the Nanoscience Technology Center,
and the departments of Optics and Photonics, Materials Science
Engineering, Physics and Chemistry at the University of Central
Florida, U.S., Developed an ultrathin photon transistor and
photonic synapses using graphene-PQD (graphene-perovskite quantum
dot; G-PQD) superstructures. To prepare the superstructures they
grew PQDs directly from a graphene lattice. Phototransistors made
of G-QPDs exhibited excellent responsivity and specific
detectivity. The light-assisted memory effects of the
superstructures allowed photonic synaptic behavior for neuromorphic
computing, which the team demonstrated through facial recognition
applications with the assistance of machine learning. Pradhan et
al. expect the G-PQD superstructure to bolster new directions to
develop highly effective optoelectronic devices.
Building ultrasensitive and ultrathin phototransistors and
photonic synapses using hybrid superstructures
