Semiconducting 2-D alloys could be key to overcoming
the technical limitations of modern electronics. Although 2-D Si–Ge
alloys would have interesting properties for this purpose, they
were only predicted theoretically. Now, scientists from Japan
Advanced Institute of Science and Technology have realized the
first experimental demonstration. They have also shown that the Si
to Ge ratio can be adjusted to fine tune the electronic properties
of the alloys, paving the way for novel applications.
