A new all-2-D light-emitting field-effect transistor

5th October 2020by admin0

Transition metal dichalcogenides (TMDs), a
two-dimensional (2-D) semiconductor, are promising materials for
next-generation optoelectronic devices. They can emit strong light
due to the large binding energies of excitons, quasiparticles
composed of electron-hole pair, as well as an atomically thin
nature. In existing 2-D light emitting devices, however, the
simultaneous injection of electrons and holes into 2-D materials
has been challenging, which results in low light emission
efficiency.

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      The New Fusion technology is based on a phenomenon called triplet-triplet annihilation (TTA) which is a process in which two triplet excitons annihilate and produce a higher energy singlet exciton.

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